| PART |
Description |
Maker |
| SGB15N60HS06 |
High Speed IGBT in NPT-technology
|
Infineon Technologies AG
|
| APT50GS60BR APT50GS60SR APT50GS60SRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| SGB15N60HS Q67040-S4535 |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW50N60HS SGW50N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKW30N60HS SKW30N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
| IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
